内应力对于氧化锌光学薄膜折射率的影响研究

内应力对于氧化锌光学薄膜折射率的影响研究(论文12000字)
摘要：氧化锌(ZnO)是一种优秀的光电导材料，在太阳能电池，计算机相关技术及半导体材料行业等方面具有广泛的应用，薄膜内应力是影响ZnO薄膜结晶质量的重要因素，因而会对ZnO薄膜的折射率，激子密度，消光系数等性质造成影响，因此影响由ZnO薄膜制成的光电子器件性能。在本项研究中，采用电子束蒸发法在石英衬底上制备出结晶性良好的氧化锌薄膜，并分别在300、400、500和600℃下退火一个小时。然后利用 X射线衍射仪、原子力显微镜、椭偏仪及荧光光度仪对其结晶性能和光学性能进行表征，对内应力与薄膜折射率之间的关系进行了研究，并分析了其原因。结果表明薄膜折射率随着温度的变化趋势与内应力随着温度的变化趋势相吻合，当内应力增大时，薄膜折射率随之变小，内应力减小时，折射率也就相应变大。且内应力受到退火温度影响，在500℃时最小为0.0448GPa，折射率也相应最大为1.99。从中我们也可以发现，当内应力减小时，ZnO薄膜的结晶质量也随之提高，进而提高由ZnO薄膜制成的光电子器件性能，因此这些研究结果在制造ZnO基光电子器件时，对提高其性能有重要的指导意义和参考价值。
关键词：氧化锌薄膜；电子束蒸发法；内应力；折射率

Influence of Internal Stress on the Refractive Index of ZnO Optical Film
Abstract:Zinc Oxide (ZnO) is an excellent photoconductive material. It has a wide range of applications in solar cells, computer-related technologies and semiconductor materials industries. The stress in the film is an important factor which affects the crystal quality of the ZnO film. Therefore, the refractive index, exciton density, extinction coefficient and other properties of the ZnO film are affected, thus affecting the performance of the optoelectronic device made of ZnO film, and thus affect the performance of optoelectronic devices made of ZnO thin films. In this study, a zinc oxide thin film with good crystallinity was prepared on a quartz substrate by electron beam evaporation and annealed at 300, 400, 500, and 600°C. for one hour. Then the crystallinity and optical properties of the samples were characterized by X-ray diffractometry, atomic force microscopy, ellipsometry and fluorescence photometer. The relationship between the internal stress and the refractive index of the film was studied, and the reasons were analyzed. The results show that the change trend of the refractive index of the film with temperature coincides with the change trend of the internal stress with the temperature. When the internal stress increases, the refractive index of the film decreases, and when the internal stress decreases, the refractive index increases accordingly. . The internal stress is affected by the annealing temperature. The minimum is 0.0448 GPa at 500°C and the maximum refractive index is 1.99. From this we can also find that when the internal stress decreases, the crystalline quality of the ZnO thin film also increases, which in turn improves the performance of the optoelectronic device made of the ZnO thin film. Therefore, these research results have important guiding significance and reference value for improving the performance ofZnO-based optoelectronic devices.
Key words：zinc oxide thin film；electron beam evaporation；internal stress； refractive index
 

目 录
摘要    Ⅰ
Abstract    Ⅱ
1 绪论    1
1.1 ZnO的基本物理性质及其应用    1
1.2 ZnO光学性质研究状况    2
1.2.1 ZnO的透过率    2
1.2.2 ZnO的反射率与折射率    2
1.3本文的研究内容    8
2 ZnO纳米薄膜的制备方法    8
2.1 喷涂热分解    8
2.2 电子束蒸发    9
2.3 磁控溅射    9
2.4 溶胶—凝胶法    9
3 ZnO薄膜的表征方法或仪器    10
3.1  X射线衍射    10
3.2 原子力显微镜    10
3.3 拉曼光谱    11
3.4 紫外—可见分光光度计    11
3.5荧光光谱仪    12
4 ZnO纳米晶薄膜的内应力对折射率的影响    12
4.1电子束蒸发制备ZnO薄膜    12
4.1.1 电子束蒸发装置    12
4.1.2 ZnO薄膜制备    13
4.2 ZnO纳米晶薄膜的微结构表征与内应力计算    13
4.3 内应力对于折射率等光学性质的影响    17
5 结论    19
参考文献    19
致谢    22