双栅极晶体管型光电传感器的设计

双栅极晶体管型光电传感器的设计(论文10000字)
摘要：近些年来随着半导体结构研究的不断进步，金属氧化物半导体场效应晶体管（MOSFET）已经广泛应用于高精度传感器中。由于双栅极MOSFET相对于传统单栅极MOSFET在高速度，低功耗方面有更加优良的性能，所以近年来人们对于双栅极MOSFET的研究更加重视。以MOSFET所设计的光电传感器，研究其作为MOS结构的侧向光伏和双极性电阻效应。一方面，通过MOS结构制造工艺的改进获得更强的光电效应。另一方面，通过检测手段和方式的提高获得MOS结构更全面的数据分布图，并以此为根据分析其作为各种光电器件的应用前景和方向。关键词：MOSFET，栅极电压，漏极电流，双极性电阻效应

Design of double gate transistor photoelectric sensor
Abstract:With the development of semiconductor structure research in recent years, metal oxide semiconductor field effect transistor (MOSFET) has been widely used in high-precision sensors. Because the double-gate MOSFET has better performance in high speed and low power consumption than the traditional single-gate MOSFET, more attention has been paid to the research of double-gate MOSFET in recent years. The side photovoltaic and bipolar resistivity effects of MOSFET are studied. On the one hand, better photoelectric effect can be achieved through the improvement of MOS manufacturing technology. On the other hand, the more comprehensive data distribution diagram of MOS structure can be obtained through the improvement of detection means and methods, and its application prospect and direction as various photoelectric devices can be analyzed based on this.Keywords:MOSFET,Gate voltage, drain current, Bipolar resistance effect

目录
1.绪论    4
1.1 光电效应概述    4
1.1.1 光电效应    4
1.1.2 外光电效应    4
1.1.3内光电效应    4
1.2内光电效应的分类    5
1.2.1光生伏特效应    5
1.2.2光电导效应    5
1.3 论文选题依据及主要工作    6
2.基本理论    7
2.1 MOSFET理论基础    7
2.2双栅极MOSFET理论模型    9
3.传统单栅极晶体管的器件结构及其仿真    11
3.1 COMSOL Multiphysics 介绍    11
3.2 MOSFET仿真模拟    12
3.3 MESFET仿真模拟    16
4.双栅极晶体管的器件设计及其仿真    17
5.总结与展望    20
参考文献    21
致谢    23